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Lateral current spreading is experimentally and theoretically investigated in ridge waveguide laser diodes having various residual guide thickness outside the ridge region. It is found that a critical residual thickness exists below which the lasers emit in a single mode with a low threshold current. Above this critical value, the
We propose a new ridge waveguide laser diode (LD) which supports an asymmetrically expanded optical field normal to the active layer in order to increase t.
Highly efficient erbium-doped titanium in-diffused ridge waveguide optical amplifiers and lasers in x-cut congruent LiNbO3 pumped at 1486 nm have been developed. A total internal gain of 14 dB has been achieved in 4.6 cm-long waveguides for a coupled pump power of 200 mW. We demonstrated a laser operating at
Ridge-waveguide lasers are known to exhibit laser emission with a very good beam quality. In this article, a fabrication process for these devices with a self-aligned p-contact is de- scribed which accounts for several advantages as e.g. a symmetric current injection. For lasers with varying ridge width, the beam quality was
Abstract—We propose a new ridge waveguide laser diode (LD) which supports an asymmetrically expanded optical field normal to the active layer in order to increase the maximum kink-free output power and reduce the aspect ratio of output beams. The de- pendence of maximum kink-free output power on facet reflectivity.
26 Apr 2010 In this study, we have reported the fabrication and device characteristics of metal organic chemical vapor deposition (MOCVD) grown 1.3-µm InP-based InGaAsP multiquantum well ridge waveguide laser diodes (LDs) for communication systems. The LD parameters such as threshold current, differential
92 · 1.3 µm Wavelength AlGaInAs/InP Ridge-Waveguide Lasers Utilizing Benzocyclobutene Planarization Process. 1. Introduction. The rapid increase of data communication expedites the standardization of high-speed communication sys- tems, such as 100 Gbit/s ethernet (100 GbE) and 16. Gbit/s Fibre Channel (16GFC).
23 Jan 2017 A high-brightness ridge-waveguide (RW) continuous-wave (CW) laser diode emitting 2.2 W of light at a 1060 nm wavelength into a circular beam profile has been demonstrated.
Ridge waveguide lasers have been fabricated on Nd3+ doped LiNbO3 crystals. The fs-laser writing technique was used to define ridge structures on a gradient-index planar waveguide fabricated by Zn-diffusion. This planar waveguide was formed in a z-cut LiNbO3 substrate homogeneously doped with a 0.23% of Nd3+
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