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SVD2N60M/F/T/D N ?????????MOS ??. ??????S-RinTM ????VDMOS ??????? ?????????????????????????. ??????????????????????? ?????????AC-DC ????,DC-DC ??. ???,??H ?PMW ????? ??.
SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
SVD2N60M/SVD2N60F. Hangzhou Silan Microelectronics Co.,Ltd. REV:1.0 2008.06.24. Http: www.silan.com.cn. 600V N-Channel MOSFET. General Description. These N-channel enhancement mode power field effect transistors are produced using Silan's proprietary , planar stripe, DMOS technology. This advanced
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SVD2N60M PDF datasheet. Download or read online Hangzhou Silan Microelectronics SVD2N60M 2A, 600V N-Channel MOSFET pdf data sheet.
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SVD2N60M Datasheet PDF Download - 600V N-CHANNEL MOSFET.
17 Apr 2009 SVD2N60M/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary. S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance,
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