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Lecture objective: p-n diode at reverse bias Hole profile in Si p-n junction. Electron-hole concentration in a Si p-n junction. Acceptor density N a. =5?1015 cm-3. Donor density N d. =1?1015 cm-3. T="300K". Dashed line show the boundaries of the depletion region. V .. Avalanche Breakdown mechanism. Mechanisms for
In Zener breakdown, the breakdown voltage depends on the temperature of P-N junction.The breakdown voltage decreases with increase in the junction temperature. Avalanche Breakdown. The avalanche breakdown is observed in the Zener Diodes having Vz having than 8 V. In the reverse biased condition, the
21 Oct 2011 The Zener effect is the breakdown mechanism if the reverse bias required to force breakdown occurs at low voltages. Consider the heavily doped p-n junction shown to the left and then apply a reverse bias to the junction. Reverse bias brings the conduction band very close to the valence band.
reverse biased p-n junctions and their voltage-current characteristics are described. Poisson's equation, junction breakdown mechanisms, Zener and avalanche break- down, and junction capacitance are discussed. Rectifying diodes, half-wave recti- fiers, Zener diode for electric meter protection and as peak clipper are
24 Dec 2016 Break Down Mechanism in P-N Junction Diode: If the reverse-bias applied to a p-n junction is increased, a point will reach when the junction breaks down and reverse current rises sharply to a value limited only by the external resistance connected in series. This specific value of the reverse bias voltage is
UNIT 1. PN JUNCTION DIODE. 1.0 INTRODUCTON. Based on the electrical conductivity all the materials in nature are classified as insulators, semiconductors, and conductors. Insulator: An insulator is a material that offers a very low level (or negligible) of conductivity when voltage is applied. Eg: Paper, Mica, glass, quartz.
Lecture 12: pn junction breakdown and heterojunctions. Contents. 1 Si pn junction. 1. 2 Junction breakdown. 3. 2.1 Avalanche breakdown . . mechanism with dopant concentration is shown in figure 5. Zener diodes are primarily used as surge protectors in circuits, since there is a rapid increase in current with a small
19 Dec 2013 In this article,we have explained PN Junction breakdown characteristics of diode through Avalanche breakdown and Zener breakdown phenomena.
A p-n Junction is said to be in Reverse Bias when the P-type region is made negative with respect to the N-type region. when reverse bias voltage exceeds a break down voltage VZ Breakdown mechanism is either Avlance or Zener. Avalanche break down:- If.
4 Oct 2005 Attempts to decrease vD past -VZK instead just causes further breaking of covalent bonds (i.e., conductivity ? increases). Therefore |iD| increases while. ZK. D v. V. ? ? . There are two mechanisms for breakdown. 1)Zener Effect – Covalent bonds break because of large E-field. 2)Avalanche Effect – Bonds

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