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Figure 7 IV curve of the silicon p-n junction diode. The current-voltage relation or IV curve of a silicon p-n junction is shown in Figure 7. In reverse bias, the p-n junction exhibits extreme electrical resistance and only a very small current flows. If the reverse bias voltage becomes too large then the junction will breakdown and

24 Dec 2016 Break Down Mechanism in P-N Junction Diode: If the reverse-bias applied to a p-n junction is increased, a point will reach when the junction breaks down and reverse current rises sharply to a value limited only by the external resistance connected in series. This specific value of the reverse bias voltage is
A p-n Junction is said to be in Reverse Bias when the P-type region is made negative with respect to the N-type region. when reverse bias voltage exceeds a break down voltage VZ Breakdown mechanism is either Avlance or Zener. Avalanche break down:- If.
UNIT 1. PN JUNCTION DIODE. 1.0 INTRODUCTON. Based on the electrical conductivity all the materials in nature are classified as insulators, semiconductors, and conductors. Insulator: An insulator is a material that offers a very low level (or negligible) of conductivity when voltage is applied. Eg: Paper, Mica, glass, quartz.
4 Oct 2005 Attempts to decrease vD past -VZK instead just causes further breaking of covalent bonds (i.e., conductivity ? increases). Therefore |iD| increases while. ZK. D v. V. ? ? . There are two mechanisms for breakdown. 1)Zener Effect – Covalent bonds break because of large E-field. 2)Avalanche Effect – Bonds
The built in potential across a PN junction increases as Na or N., increases. 3 . Further increase in the voltage will cause currents to be limited only by the external circuit. Three principal mechanisms are responsible for this breakdown. 1. Avalanche Breakdown In a narrow diode, as the depletion region increases, it can.
When we increase the reverse voltage across the pn junction diode, what really happens is that the electric field across the diode junction increases (both internal & external). Zener breakdown phenomena occurs in a pn junction diode with heavy doping & thin junction (means depletion layer width is very small).
21 Oct 2011 The first of two breakdown mechanisms is zener breakdown The Zener effect is the breakdown mechanism if the reverse bias required to force breakdown occurs at low voltages. Consider the heavily doped p-n junction shown to the left and then apply a reverse bias to the junction. Reverse bias brings
Lecture 12: pn junction breakdown and heterojunctions. Contents. 1 Si pn junction. 1. 2 Junction breakdown. 3. 2.1 Avalanche breakdown . . mechanism with dopant concentration is shown in figure 5. Zener diodes are primarily used as surge protectors in circuits, since there is a rapid increase in current with a small

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February 2018