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Bsp 130 datasheet pdf: >> http://xwu.cloudz.pw/download?file=bsp+130+datasheet+pdf << (Download)
Bsp 130 datasheet pdf: >> http://xwu.cloudz.pw/read?file=bsp+130+datasheet+pdf << (Read Online)
23 Apr 1999 NXP Semiconductors. Product data sheet. NPN Darlington transistors. BSP50; BSP51; BSP52. FEATURES. • High current (max. 1 A). • Low voltage (max. 80 V). • Integrated diode and resistor. APPLICATIONS. • Industrial high gain amplification. DESCRIPTION. NPN Darlington transistor in a SOT223 plastic
2008-07-10. Smart Lowside Power Switch. HITFET. ®. BSP 75N. Data Sheet Rev. 1.4. Features. • Logic Level Input. • Input protection (ESD). • Thermal shutdown with auto restart. • Overload protection. • Short circuit protection. • Overvoltage protection. • Current limitation. • Green Product (RoHS compliant). • AEC Stress Test
VS-130-160MT..KPbF Series www.vishay.com. Vishay Semiconductors. Revision: 17-Aug-17. 1. Document Number: 94354. For technical questions within your region: .. a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.
26 Nov 2012 Transconductance. VDS?2*ID*RDS(on)max , ID = -0.89 A. 0.7 gfs. S. -. 1.4. Input capacitance. VGS = 0 V, VDS = -25 V, f = 1 MHz. Ciss. 130. 160. pF BSP 315 P. I D. Power Dissipation. Ptot = f (TA). 0. 20. 40. 60. 80. 100. 120 °C. 160. TA. 0.0. 0.2. 0.4. 0.6. 0.8. 1.0. 1.2. 1.4. 1.6. W. 1.9. BSP 315 P. P tot.
Type. Ordering Code. Tape and Reel Information. BSP 317. Q67000-S94. E6327. Maximum Ratings. Parameter. Symbol. Values. Unit. Drain source voltage. V. DS V. GS(th). -0.8. -1.1. -2. Zero gate voltage drain current. V. DS. = -200 V, V. GS. = 0 V, T j. = 25 ?C. V. DS. = -200 V, V. GS. = 0 V, T j. = 125 ?C. V. DS. = -130 V, V.
Surface finish: PN25 - PN64. PN100 - PN400. Aluminium anodized. Carbon Steel electroless nickel. Connection: 1/4" bis 2" BSP. Donaldson Filtration Deutschland GmbH · Industrial Filtration Solutions · Bussingstra?e 1 · D-42781 Haan · Telefon +49/2129/569-0 · Telefax +49/2129/569-100. GB. Technical Data Sheet.
BSP Regulation Current. ISHORT. —. 25. —. mA. Current Regulation (Fast Charge, Constant-Current Mode). Fast Charge Current. Regulation. IREG. 130. —. 1100. mA TA = -5°C to +55°C. 117. 130. 143. mA PROG = 10 k?. 900. 1000. 1100. mA PROG = 1.1 k?. Preconditioning Current Regulation (Trickle Charge
11 Dec 2001 DATA SHEET. Product specification. Supersedes data of 1997 Jun 23. 2001 Dec 11. DISCRETE SEMICONDUCTORS. BSP130. N-channel enhancement mode vertical D-MOS transistor age. M3D087
12 Sep 1996 BSP 125. Electrical Characteristics, at Tj = 25°C, unless otherwise specified. Parameter. Symbol. Values. Unit min. typ. max. Dynamic Characteristics. Transconductance. VDS? 2 * ID * RDS(on)max, ID = 0.12 A gfs. 0.06. 0.18. -. S. Input capacitance. VGS = 0 V, VDS = 25 V, f = 1 MHz. Ciss. -. 95. 130. pF.
26 Nov 2012 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified. Parameter. Symbol. Conditions. Values. Unit min. typ. max. Dynamic Characteristics. Transconductance gfs. |VDS|?2*|ID|*RDS(on)max ,. I. D. =-0.23A. 0.29. 0.57. -. S. Input capacitance. Ciss. V. GS. =0, V. DS. =-25V, f="1MHz". -. 83. 104 pF.
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