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Plasma etching tutorial: >> http://oqj.cloudz.pw/download?file=plasma+etching+tutorial << (Download)
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Professor N Cheung, U.C. Berkeley. Lecture 15. EE143 F2010. 1. Reactive Ion Etching (RIE). ~ plasma wafers. RF. 13.56. MHz. Parallel-Plate. Reactor. Plasma generates (1) Ions. (2) Activated neutrals. Enhance chemical reaction. Sputtering
Dry Etching Overview. 0 What is dry etching? – Material removal reactions occur in the gas phase. 0 Types of dry etching. – Non-plasma based dry etching. – Plasma based dry etching. 0 Why dry etching? 0 Development of dry etching. 0 Plasma parameters/influences. 0 Deep Reactive Ion Etching
Dry Etching - Substrates are immersed in a reactive gas (plasma). The layer to be etched is removed by chemical reactions and/or physical means (ion bombardment). The reaction products must be volatile and are carried away in the gas stream.
17 Apr 2013 Introduction. ? Plasma Etching Metrics – Isotropic, Anisotropic,. Selectivity, Aspect Ratio, Etch Bias. ? Plasma and Wet Etch Summary. ? The Plasma State - Plasma composition, DC & RF Plasma. ? Plasma Etching Processes - The principle of plasma etching, Etching Si and SiO2 with CF4. ? Other Plasma
Basic Concepts and Terminology in Plasma Etching. In my personal opinion, learning about such a rather complex system with many interactions as plasma processing is not 100% straight forward. It's more like solving a self consistent equation system by starting with a rough estimate and refining it step by step. Means you
O tli. 1 Introductory Concepts. Outline. 1. Introductory Concepts. 2. Plasma Fundamentals. 3. The Physics and Chemistry of Plasmas. 4 A i t. M h i. 4. Anisotropy Mechanisms. 5. The Etching of Si and its Compounds g p. 6. The Etching of Other Materials. 2
8 Jun 2014
In the eighties, plasma etching became a mature technique to etch layers and was introduced in the production of integrated circuits. Reactive Ion Etching was the main technology, but new techniques were developed. In the nineties new techniques, such as electron cyclotron resonance (ECR) ,and inductively coupled
1. 2006/4/12. 1. Chapter 7. Plasma Basics. 2006/4/12. 2. Objectives. •List at least three IC processes using plasma. •Name three important collisions in plasma. •Describe mean free path. •Explain how plasma enhance etch and CVD processes. •Name two high density plasma sources
This folder contains process modules about dry (or plasma) etching of various materials such as oxide, polysilicon, Al, photoresist (including descum) etc.
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