s transmission in an erbium-doped waveguide amplifier on silicon. Jonathan D. B. Bradley,1,* Marcia Costa e Silva,2 Mathilde Gay,2 Laurent Bramerie,2. Alfred Driessen,1 Kerstin Worhoff,1 Jean-Claude Simon,2 and Markus Pollnau1. 1 Integrated Optical Microsystems Group, MESA+ Institute for Nanotechnology,
Based on the combined model of erbium-doped waveguide amplifier with high erbium ion concentration, the rate equation and evolution equation is solved numerically. The waveguide parameters such as doping concentration, waveguide length are optimized in this paper. With pumping power of 150 mW , the optimal
1 Nov 2000 As the name implies, an erbium-doped waveguide amplifier (EDWA) consists of waveguides embedded in an amorphous erbium-doped glass substrate (see Figure 1). The erbium atoms provide the glass with gain in the 1,550-nm fiber-optic window. The waveguide itself is a localized increase in the glass
An erbium-doped waveguide amplifier (or EDWA) is a type of an optical amplifier. It is a close relative of an EDFA, Erbium-doped fiber amplifier, and in fact EDWA's basic operating principles are identical to those of the EDFA. Both of them can be used to amplify infrared light at wavelengths in optical communication bands
Erbium-Doped Waveguide Amplifier for. Reconfigurable WDM Metro Networks. K. Ennser, Member, IEEE, G. Della Valle, M. Ibsen, J. Shmulovich, and S. Taccheo. Abstract—Transient dynamic due to signal power fluctuations is the main impairment in reconfigurable transparent wave- length-division-multiplexing metro
We describe an efficient erbium-doped waveguide amplifier insensitive to output power variation by means of optical gain clamping. Output power suitable for metro applications and gain flatness over full C-band are demonstrated. We also show that this technology is suitable for transparent WDM ring network. In fact the
We demonstrate a 15-dB gain bidirectional optical-gain-clamped erbium-doped waveguide amplifier immune to transient dynamic impairments. The device is suit.
Layout Optimization for Erbium-Doped Waveguide. Amplifiers. Daniel Lowe, Richard R. A. Syms, Member, IEEE, and Weibin Huang. Abstract—The optical layout of erbium-doped waveguide am- plifiers (EDWAs) based on spiral and folded spiral planar light- wave circuits is considered. It is shown that layouts may be
High output power erbium doped waveguide amplifier for QAM distribution. C. M. McIntosh. Physics Department, Lehigh University, 16 Memorial Drive East, Bethlehem PAl 801 5 USA. Tel. (610) 758-3955 Fax. (610) 758-4561, christopher@lehigh.edu. J.-M. P. Delavaux, G.C. Wilson, C. Hullin, B. Neyret. Bell Laboratories

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March 2018